Formation and evolution of epitaxial Co5Ge7 on Ge„001... surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope
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چکیده
Cobalt was deposited on single-crystal Ges001d surface at ,350 °C by electron-beam evaporation in an ultrahigh-vacuum transmission electron microscope. The deposited Co reacts with Ge to form nanosized islands with the cobalt germanide Co5Ge7 phase. The Co5Ge7 islands show square and rectangular shapes. Two epitaxial orientation relationships between Co5Ge7 and Ge were observed: Co5Ge7 k110ls001d iGek100ls001d and Co5Ge7k001ls110d iGek100ls001d. © 2005 American Institute of Physics. fDOI: 10.1063/1.1862331g
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تاریخ انتشار 2005